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RTU002P02T106

20V|250mA (Ta)|200mW (Ta)
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MOSFET P-CH 20V 0.25A SOT-323

Specifications

Brand
Rohm Semiconductor
Package
UMT3
Packaging
—
Weight
—

Total Inventory

413pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RTU002P02T106 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs1.5Ohm @ 250mA, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUMT3
Package / CaseSC-70, SOT-323

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Datasheet & Documents

rtu002p02t106.pdf

PDF Document · 3 pages

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