Heisener Electronics
BOM

RTR030P02HZGTL

20 V|3A (Ta)|700mW (Ta)
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MOSFET P-CH 20V 3A TSMT3

Specifications

Brand
Rohm Semiconductor
Package
TSMT3
Packaging
—
Weight
—

Total Inventory

6,483pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RTR030P02HZGTL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs75mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 10 V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT3
Package / CaseSC-96

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