Heisener Electronics
BOM

RTQ030P02TR

20V|3A (Ta)|1.25W (Ta)
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MOSFET P-CH 20V 3A TSMT6

Specifications

Brand
Rohm Semiconductor
Package
TSMT6 (SC-95)
Packaging
—
Weight
—

Total Inventory

189pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RTQ030P02TR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT6 (SC-95)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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Datasheet & Documents

rtq030p02tr.pdf

PDF Document · 5 pages

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