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20V|6A (Ta)|650mW (Ta)
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MOSFET N-CH 20V 6A TSST8
Specifications
- Brand
- Rohm Semiconductor
- Package
- 8-TSST
- Packaging
- —
- Weight
- —
Total Inventory
102pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RT1C060UNTR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 650mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSST | |
| Package / Case | 8-SMD, Flat Lead |
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Datasheet & Documents
rt1c060untr.pdf
PDF Document · 6 pages
