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RT1A040ZPTR

12V|4A (Ta)|1.25W (Ta)
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MOSFET P-CH 12V 4A TSST8

Specifications

Brand
Rohm Semiconductor
Package
8-TSST
Packaging
—
Weight
—

Total Inventory

168pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RT1A040ZPTR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2350pF @ 6V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSST
Package / Case8-SMD, Flat Lead

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Datasheet & Documents

rt1a040zptr.pdf

PDF Document · 6 pages

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