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RSS050P03FU6TB

30V|5A (Ta)|2W (Ta)
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MOSFET P-CH 30V 5A 8SOIC

Specifications

Brand
Rohm Semiconductor
Package
8-SOP
Packaging
—
Weight
—

Total Inventory

271pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RSS050P03FU6TB from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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Datasheet & Documents

rss050p03fu6tb.pdf

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