Heisener Electronics
BOM

RSQ035N06HZGTR

60 V|3.5A (Tc)|950mW (Ta)
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MOSFET N-CH 60V 3.5A TSMT6

Specifications

Brand
Rohm Semiconductor
Package
TSMT6 (SC-95)
Packaging
—
Weight
—

Total Inventory

26,211pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RSQ035N06HZGTR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 10 V
FET Feature-
Power Dissipation (Max)950mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT6 (SC-95)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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