Heisener Electronics
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RS3E180ATTB1

30V|18A (Ta)|1.4W (Ta)
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RS3E180AT IS A POWER MOSFET FOR

Specifications

Brand
Rohm Semiconductor
Package
8-SOP
Packaging
—
Weight
—

Total Inventory

440pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RS3E180ATTB1 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 15V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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