Heisener Electronics
BOM

RS1BL-R3G_1

100V|800mA
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 100V 800MA SUBSMA

Specifications

Brand
Taiwan Semiconductor Corporation
Package
DO-219AB
Packaging
—
Weight
—

Total Inventory

391pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RS1BL-R3G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)800mA
Voltage - Forward (Vf) (Max) @ If1.3V @ 800mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F10pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 150°C

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