Heisener Electronics
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RRR030P03HZGTL

30 V|3A (Ta)|700mW (Ta)
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MOSFET P-CH 30V 3A TSMT3

Specifications

Brand
Rohm Semiconductor
Package
TSMT3
Packaging
—
Weight
—

Total Inventory

26,475pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RRR030P03HZGTL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.2 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 10 V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT3
Package / CaseSC-96

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