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30V|10A (Ta), 31A (Tc)|2W (Ta)
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RQ3E100AT IS THE HIGH RELIABILIT
Specifications
- Brand
- Rohm Semiconductor
- Package
- 8-HSMT (3.2x3)
- Packaging
- —
- Weight
- —
Total Inventory
431pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RQ3E100ATTB from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 31A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-HSMT (3.2x3) | |
| Package / Case | 8-PowerVDFN |
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