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RN2904FE-LF

50V|100mA|100mW

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TRANS 2PNP PREBIAS 0.1W ES6

Specifications

Brand: Toshiba Semiconductor and Storage
Package: SOT-563, SOT-666
Packaging: —
Weight: —

Total Inventory

5,197pcs

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Purchase Quantity

MOQ: 1 pcs

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Discover how RN2904FE-LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Toshiba Semiconductor and Storage
Series	-
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	47kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

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RN2904FE-LF

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