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50V|100mA|200mW
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TRANS 2NPN PREBIAS 0.2W US6
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 6-TSSOP, SC-88, SOT-363
- Packaging
- —
- Weight
- —
Total Inventory
442pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RN1964TE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 47kOhms | |
| Resistor - Emitter Base (R2) | 47kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 250MHz | |
| Power - Max | 200mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
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