RN1911FETE85LF
50V|100mA|100mW
原装正品全球货源快速交付品质认证技术支持批量优惠
TRANS 2NPN PREBIAS 0.1W ES6
规格参数
- 品牌
- Toshiba Semiconductor and Storage
- 封装
- SOT-563, SOT-666
- 包装方式
- —
库存总量
4,698个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Toshiba Semiconductor and Storage 的 RN1911FETE85LF 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 10kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 250MHz | |
| Power - Max | 100mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 |
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