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20V|300mA|200mW
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TRANS PREBIAS NPN 0.2W S-MINI
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
209pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RN1444ATE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 300mA | |
| Voltage - Collector Emitter Breakdown (Max) | 20V | |
| Resistor - Base (R1) | 2.2 kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 30MHz | |
| Power - Max | 200mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | S-Mini |
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