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600V|10A (DC)
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DIODE GEN PURP 600V 20A
Specifications
- Brand
- Renesas Electronics America
- Package
- TO-220-3 Full Pack
- Packaging
- —
- Weight
- —
Total Inventory
488pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RJS6004WDPK-00-T0 from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| Diode Configuration | 1 Pair Common Cathode | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 15ns | |
| Current - Reverse Leakage @ Vr | 10µA @ 600V | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-3P |
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Datasheet & Documents
rjs6004wdpk-00-t0.pdf
PDF Document · 4 pages
