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RGW50TK65DGVC11

650 V|30 A|67 W

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IGBT TRNCH FIELD 650V 30A TO3PFM

Specifications

Brand: Rohm Semiconductor
Package: TO-3PFM, SC-93-3
Packaging: —
Weight: —

Total Inventory

1,350pcs

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Purchase Quantity

MOQ: 1 pcs

Certifications & Authorizations

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Discover how RGW50TK65DGVC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Rohm Semiconductor
Series	-
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 25A
Power - Max	67 W
Switching Energy	390µJ (on), 430µJ (off)
Input Type	Standard
Gate Charge	73 nC
Td (on/off) @ 25°C	35ns/102ns
Test Condition	400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	92 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

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RGW50TK65DGVC11

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