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Send MessageRGTVX2TS65DGC11
650 V|111 A|319 W
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IGBT TRENCH FS 650V 111A TO247N
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
222pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RGTVX2TS65DGC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Current - Collector (Ic) (Max) | 111 A | |
| Current - Collector Pulsed (Icm) | 240 A | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A | |
| Power - Max | 319 W | |
| Switching Energy | 2.08mJ (on), 1.15mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 123 nC | |
| Td (on/off) @ 25°C | 49ns/150ns | |
| Test Condition | 400V, 60A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247N |
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