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RGTH60TS65DGC11

650V|58A|194W
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IGBT 650V 58A 194W TO-247N

Specifications

Brand
Rohm Semiconductor
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

250pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RGTH60TS65DGC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)58A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max194W
Switching Energy-
Input TypeStandard
Gate Charge58nC
Td (on/off) @ 25°C27ns/105ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)58ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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