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650V|85A|277W
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IGBT 650V 85A 277W TO-247N
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
744pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RGTH00TS65GC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 85A | |
| Current - Collector Pulsed (Icm) | 200A | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | |
| Power - Max | 277W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 94nC | |
| Td (on/off) @ 25°C | 39ns/143ns | |
| Test Condition | 400V, 50A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247N |
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