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RGS80TSX2DGC11

1200 V|80 A|555 W
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IGBT TRENCH FLD 1200V 80A TO247N

Specifications

Brand
Rohm Semiconductor
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

762pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RGS80TSX2DGC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Power - Max555 W
Switching Energy3mJ (on), 3.1mJ (off)
Input TypeStandard
Gate Charge104 nC
Td (on/off) @ 25°C49ns/199ns
Test Condition600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)198 ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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