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650 V|30A
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DIODE GEN PURP 650V 30A TO247GE
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-247-2
- Packaging
- —
- Weight
- —
Total Inventory
1,755pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RFS30TZ6SGC13 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 30A | |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 30 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 35 ns | |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-2 | |
| Supplier Device Package | TO-247GE | |
| Operating Temperature - Junction | 175°C |
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