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RFP50N06

60V|50A (Tc)|131W (Tc)
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MOSFET N-CH 60V 50A TO-220AB

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

1,115,376pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RFP50N06 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2020pF @ 25V
FET Feature-
Power Dissipation (Max)131W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

rfp50n06.pdf

PDF Document · 10 pages

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Datasheet Preview

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