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350 V|10A
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DIODE GEN PURP 350V 10A TO252GE
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging
- —
- Weight
- —
Total Inventory
18,219pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RFN10BGE3STL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 350 V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 30 ns | |
| Current - Reverse Leakage @ Vr | 10 µA @ 350 V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-252GE | |
| Operating Temperature - Junction | 150°C |
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