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60V|4A (Tc)|30W (Tc)
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MOSFET N-CH 60V 4A DPAK
Specifications
- Brand
- ON Semiconductor
- Package
- TO-252AA
- Packaging
- —
- Weight
- —
Total Inventory
389pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RFD4N06LSM9A_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 30W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Datasheet & Documents
rfd4n06lsm9a.pdf
PDF Document · 5 pages
