Heisener Electronics
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RFD16N05LSM9A_1

50V|16A (Tc)|60W (Tc)
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MOSFET N-CH 50V 16A TO-252AA

Specifications

Brand
ON Semiconductor
Package
TO-252AA
Packaging
—
Weight
—

Total Inventory

8,971pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RFD16N05LSM9A_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs47mOhm @ 16A, 5V
Vgs(th) (Max) @ Id2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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