Heisener Electronics
BOM

RF6C055BCTCR

20V|5.5A (Ta)|1W (Tc)
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MOSFET P-CHANNEL 20V 5.5A TUMT6

Specifications

Brand
Rohm Semiconductor
Package
TUMT6
Packaging
—
Weight
—

Total Inventory

307pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RF6C055BCTCR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs25.8mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15.2nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTUMT6
Package / Case6-SMD, Flat Leads

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