Heisener Electronics
BOM

RF4E100AJTCR

30V|10A (Ta)|2W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 10A HUML2020L8

Specifications

Brand
Rohm Semiconductor
Package
HUML2020L8
Packaging
—
Weight
—

Total Inventory

4,842pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RF4E100AJTCR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs12.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1460pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageHUML2020L8
Package / Case8-PowerUDFN

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