RF4E080BNTR
30V|8A (Ta)|2W (Ta)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 30V 8A 8-HUML
规格参数
- 品牌
- Rohm Semiconductor
- 封装
- HUML2020L8
- 包装方式
- —
库存总量
292个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Rohm Semiconductor 的 RF4E080BNTR 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 17.6mOhm @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | HUML2020L8 | |
| Package / Case | 8-PowerUDFN |
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