Heisener Electronics
BOM

RDR005N25TL

250V|500mA (Ta)|540mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 250V 0.5A SC-96-3

Specifications

Brand
Rohm Semiconductor
Package
TSMT3
Packaging
—
Weight
—

Total Inventory

18,387pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RDR005N25TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs8.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 25V
FET Feature-
Power Dissipation (Max)540mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT3
Package / CaseSC-96

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