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RD3S100AAFRATL

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Part Number

RD3S100AAFRATL

Manufacturer

Rohm Semiconductor

Description

MOSFET N-CH 190V 10A TO252

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

RD3S100AAFRATL PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:8379 pcs

运送服务：

RD3S100AAFRATL 规格

Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drain to Source Voltage (Vdss)
190 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
Manufacturer
Rohm Semiconductor
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)
85W (Tc)
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Series
-
Supplier Device Package
TO-252
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.5V @ 1mA

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