Heisener Electronics
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RD3H080SPTL1

45V|8A (Ta)|15W (Tc)
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PCH -45V -8A POWER MOSFET

Specifications

Brand
Rohm Semiconductor
Package
TO-252
Packaging
—
Weight
—

Total Inventory

403pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RD3H080SPTL1 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)45V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs91mOhm @ 8A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 10V
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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