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200V|8A (Tc)|2.23W (Ta), 40W (Tc)
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MOSFET N-CH 200V 8A TO220
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-220FM
- Packaging
- —
- Weight
- —
Total Inventory
687pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RCX081N20 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 770mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220FM | |
| Package / Case | TO-220-3 Full Pack |
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Datasheet & Documents
rcx081n20.pdf
PDF Document · 13 pages
