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200V|10A (Tc)|850mW (Ta), 20W (Tc)
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MOSFET N-CH 200V 10A CPT3
Specifications
- Brand
- Rohm Semiconductor
- Package
- CPT3
- Packaging
- —
- Weight
- —
Total Inventory
422pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RCD100N20TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | CPT3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Datasheet & Documents
rcd100n20tl.pdf
PDF Document · 14 pages
