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RCD050N20TL

200V|5A (Ta)|20W (Tc)
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MOSFET N-CH 200V 5A CPT3

Specifications

Brand
Rohm Semiconductor
Package
CPT3
Packaging
—
Weight
—

Total Inventory

461pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RCD050N20TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs618mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCPT3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

rcd050n20tl.pdf

PDF Document · 7 pages

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