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100 V|2A
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TRENCH MOS STRUCTURE, 100V, 2A,
Specifications
- Brand
- Rohm Semiconductor
- Package
- SOD-123F
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RBLQ2MM10TFTR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Current - Average Rectified (Io) | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 770 mV @ 2 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-123F | |
| Supplier Device Package | PMDU | |
| Operating Temperature - Junction | 175°C |
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