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RAF040P01TCL

12V|4A (Ta)|800mW (Ta)
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MOSFET P-CH 12V 4A TUMT3

Specifications

Brand
Rohm Semiconductor
Package
TUMT3
Packaging
—
Weight
—

Total Inventory

255pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RAF040P01TCL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs37nC @ 4.5V
Vgs (Max)-8V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 6V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTUMT3
Package / Case3-SMD, Flat Leads

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Datasheet & Documents

raf040p01tcl.pdf

PDF Document · 13 pages

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