Heisener Electronics
BOM

RA1C030LDT5CL

20 V|3A (Ta)|1W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NCH 20V 3.0A, SMM1006, SMM1006:

Specifications

Brand
Rohm Semiconductor
Package
DSN1006-3
Packaging
—
Weight
—

Total Inventory

44,607pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RA1C030LDT5CL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs140mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V
Vgs (Max)+7V, -0.2V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDSN1006-3
Package / Case3-XFDFN

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