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800 V|2A (Tc)|69W (Tc)
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MOSFET N-CH 800V 2A TO252
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-252
- Packaging
- —
- Weight
- —
Total Inventory
22,563pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how R8002CND3FRATL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 12.1 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 69W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252 | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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