Heisener Electronics
BOM

R6520ENZC17

650 V|20A (Tc)|68W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 650V 20A TO3

Specifications

Brand
Rohm Semiconductor
Package
TO-3PF
Packaging
—
Weight
—

Total Inventory

900pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6520ENZC17 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

Recommended Products

H4147RBZA

H4147RBZA

RES 147 OHM 1/2W 0.1% AXIAL

FMP300FRF73-191R

FMP300FRF73-191R

RES MF 3W 1% AXIAL

MCR18ERTF4421

MCR18ERTF4421

RES SMD 4.42K OHM 1% 1/4W 1206

154MSR630K

154MSR630K

CAP FILM 0.15UF 10% 630VDC RAD

1812J2000682JDT

1812J2000682JDT

CAP CER 6800PF 200V X7R 1812

C1206C103J3GACTU

C1206C103J3GACTU

CAP CER 10000PF 25V C0G/NP0 1206

ISL21009BFB825ZS2568_222

ISL21009BFB825ZS2568_222

IC VREF SERIES 2.5V 8SOIC

LTC2050CS6-TRPBF

LTC2050CS6-TRPBF

IC OPAMP ZER-DRIFT 1CIR TSOT23-6

MTCMR-H4-GP-P1

MTCMR-H4-GP-P1

MODEM CELLULAR QUAD GPRS HSPA