Heisener Electronics
BOM

R6515ENZC8

650 V|15A (Tc)|60W (Tc)
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MOSFET N-CH 650V 15A TO3

Specifications

Brand
Rohm Semiconductor
Package
TO-3PF
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6515ENZC8 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs315mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 430µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 25 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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