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650 V|11A (Ta)|53W (Tc)
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650V 11A TO-220FM, LOW-NOISE POW
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-220FM
- Packaging
- —
- Weight
- —
Total Inventory
420pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how R6511ENXC7G from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 320µA | |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 53W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220FM | |
| Package / Case | TO-220-3 Full Pack |
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