Heisener Electronics
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R6509ENJTL

650V|9A (Tc)|94W (Tc)
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NCH 650V 9A POWER MOSFET. R6509

Specifications

Brand
Rohm Semiconductor
Package
LPTS
Packaging
—
Weight
—

Total Inventory

467pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6509ENJTL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430pF @ 25V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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