Heisener Electronics
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R6030MNX

600V|30A (Tc)|90W (Tc)
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MOSFET N-CH 600V 30A TO220FM

Specifications

Brand
Rohm Semiconductor
Package
TO-220FM
Packaging
—
Weight
—

Total Inventory

700pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6030MNX from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack

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