Heisener Electronics
BOM

R6022YNX3C16

600 V|22A (Tc)|205W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NCH 600V 22A, TO-220AB, POWER MO

Specifications

Brand
Rohm Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

2,994pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6022YNX3C16 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Rds On (Max) @ Id, Vgs165mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id6V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 100 V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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