Heisener Electronics
BOM

R6012JNJGTL

600V|12A (Tc)|160W (Tc)
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NCH 600V 12A POWER MOSFET; R6012

Specifications

Brand
Rohm Semiconductor
Package
LPTS (D2PAK)
Packaging
—
Weight
—

Total Inventory

395pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6012JNJGTL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs390mOhm @ 6A, 15V
Vgs(th) (Max) @ Id7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs28nC @ 15V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 100V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS (D2PAK)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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