Heisener Electronics
BOM

R6006JNJGTL

600V|6A (Tc)|86W (Tc)
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R6006JNJ IS A POWER MOSFET WITH

Specifications

Brand
Rohm Semiconductor
Package
LPTS (D2PAK)
Packaging
—
Weight
—

Total Inventory

1,696pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how R6006JNJGTL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id7V @ 800µA
Gate Charge (Qg) (Max) @ Vgs15.5nC @ 15V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds410pF @ 100V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS (D2PAK)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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