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60V|3A (Ta), 2A (Ta)|1.1W (Ta)
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QS8M31 IS COMPLEX TYPE MOSFET(P+
Specifications
- Brand
- Rohm Semiconductor
- Package
- 8-SMD, Flat Lead
- Packaging
- —
- Weight
- —
Total Inventory
4,530pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how QS8M31TR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA, 3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 4nC, 7.2nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF, 750pF @ 10V | |
| Power - Max | 1.1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Supplier Device Package | TSMT8 |
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