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PSMN8R5-100PSQ

100V|100A (Tj)|263W (Tc)
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MOSFET N-CH 100V 100A TO-220

Specifications

Brand
Nexperia
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

5,115pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PSMN8R5-100PSQ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs111nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5512pF @ 50V
FET Feature-
Power Dissipation (Max)263W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

psmn8r5-100psq.pdf

PDF Document · 14 pages

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