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100V|97A (Ta)|183W (Ta)
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MOSFET N-CHANNEL 100V 97A I2PAK
Specifications
- Brand
- Nexperia
- Package
- I2PAK
- Packaging
- —
- Weight
- —
Total Inventory
290pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PSMN8R5-100ESFQ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia USA Inc. | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 97A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 44.5nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3181pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 183W (Ta) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-220-3, Short Tab |
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Datasheet & Documents
psmn8r5-100esfq.pdf
PDF Document · 13 pages
